5

High-low temperature performance of GaN 600 V Schottky rectifiers

Year:
2011
Language:
english
File:
PDF, 746 KB
english, 2011
11

Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC

Year:
2014
Language:
english
File:
PDF, 548 KB
english, 2014
12

Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC

Year:
2010
Language:
english
File:
PDF, 409 KB
english, 2010
13

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

Year:
2011
Language:
english
File:
PDF, 600 KB
english, 2011
17

Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Year:
2011
Language:
english
File:
PDF, 315 KB
english, 2011
18

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400oC

Year:
2014
Language:
english
File:
PDF, 911 KB
english, 2014